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  • Author:

  • Year: 2004

  • Format: Hardback

  • Product Code: PBEP0040

  • ISBN: 978-0-86341-334-6

  • Pagination: 160pp.

  • Stock Status: In stock

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Scope: Separation-by-Implanted-Oxygen (SIMOX) technology is a method of fabrication of silicon on-insulator structures and substrates by implanting high doses of oxygen and high temperature annealing. SIMOX consists of a sequence of chapters, each of which is written by a pioneer or key contributor to the technical area. The content includes an historical perspective of SIMOX developments, fundamental formation mechanisms, emerging techniques, along with SOI material characterisation methods and results, technological processes from R&D to advanced applications, and a brief overview of VLSI circuit applications. 

SIMOX represents the first effort to compile a broad spectrum of knowledge from various groups of researchers and technologists in the world. It provides the reader with a basic understanding of SIMOX technology and in addition gives a good starting point for further investigation and applications. 


For engineers and researchers in the field.

Book contents

1 Introduction

2 Overview of SIMOX technology: historical perspective

  • 2.1 Introduction
  • 2.2 The First Stage
  • 2.3 The Second Stage
  • 2.4 The Third Stage

3 Fundamental processes in SIMOX layer formation: ion implantation and oxide growth

  • 3.1 Introduction
  • 3.2 Phenomenology of Oxide Synthesis by O+ Ion Implantation
  • 3.3 Physics and Chemistry of SIMOX Layer Formation
  • 3.4 Novel SIMOX Processing and Structures
  • 3.5 SIMOX Technology and Engineering
  • 3.6 Concluding Remarks

4 SIMOX/SOI processes: flexibility based on thermodynamic considerations

  • 4.1 Introduction
  • 4.2 Thermodynamic Processes in SIMOX
  • 4.3 Extension of Low-Dose Process Window
  • 4.4 Using Atmospheric Oxygen in BOX Formation
  • 4.5 Emerging Novel SOI Structures
  • 4.6 Partial SOI Formation
  • 4.7 Conclusion

5 Electrical and optical characterisation of SIMOX substrates

  • 5.1 Introduction
  • 5.2 Optical Characterisation
  • 5.3 Buried Oxide Integrity
  • 5.4 Si Layer Electrical Properties
  • 5.5 Capacitance Measurements
  • 5.6 Gate Oxide Integrity
  • 5.7 Lifetime
  • 5.8 Other Electrical Techniques
  • 5.9 Conclusion

6 SIMOX material technology from R&D to advanced products

  • 6.1 Introduction
  • 6.2 Products and Scalability
  • 6.3 High Temperature Oxygen Implantation
  • 6.4 SIMOX: Annealed (MATERIAL)
  • 6.5 Characterisation of SOI Materials
  • 6.6 SIMOX: Present and Future Developments
  • 6.7 Advanced Products on SIMOX: Generic and Patterned



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