Description
Scope: Since the early 1990s when highly efficient gallium nitride blue and ultraviolet LEDs and laser diodes were first demonstrated, the world market for such devices has rapidly expanded. Based on its outstanding properties, including a wide energy band gap, high thermal conductivity,and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters.
The widening range of applications are generating an 80% p.a. growth in R&D.This book covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.This book is an excellent reference for authoritative reviews of all aspects relevant to current devices,and for developing new devices.
Book review
"Once again I find myself open-mouthed in admiration for yet another wise addition to the EMIS Datareviews series. It was a pleasure to to handle a book edited and refereed by experts who have recognised the need for taking into account the growing interest in the robust and versatile properties of GaN technology and has produced an authoritative volume which is also a pleasure to consult....guaranteed to inspire researchers to develop new insights into GaN properties and applications." Current Engineering Practice, 2000.
Book readership
Materials scientists, condensed matter physicists, electronic engineers.
Level
Approximately 100 individually authored modules on: Structural, mechanical & thermal properties; Electrical, electronic and optical properties; Bandstructure; Crystal defects; Impurities & native defects; Chemical and compositional analysis; Bulk and epitaxial growth; Ion implantation; Etching; Strained GaInN quantum wells; Ohmic contacts, Schottky interfaces & band offsets; LEDs (e.g. InGaN/GaN and n-GaN/GaN on 6H-SiC, latest data from leading LED companies, colour conversion and degradation mechanisms); FET structures; HBTs; Lasers (e.g. InGaN/GaN/AlGaN diodes, lasers on 6H-SiC, electron injection & optical pumping technologies, surface emitting laser technologies, defects, gain coefficients and lasing thresholds); UV detectors.
Book contents
Approximately 100 individually authored modules on: Structural, mechanical & thermal properties; Electrical, electronic and optical properties; Bandstructure; Crystal defects; Impurities & native defects; Chemical and compositional analysis; Bulk and epitaxial growth; Ion implantation; Etching; Strained GaInN quantum wells; Ohmic contacts, Schottky interfaces & band offsets; LEDs (e.g. InGaN/GaN and n-GaN/GaN on 6H-SiC, latest data from leading LED companies, colour conversion and degradation mechanisms); FET structures; HBTs; Lasers (e.g. InGaN/GaN/AlGaN diodes, lasers on 6H-SiC, electron injection & optical pumping technologies, surface emitting laser technologies, defects, gain coefficients and lasing thresholds); UV detectors.