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Description: In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques have given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides a comprehensive introduction to silicon heterostructures, making it a valuable reference for postgraduate students, researchers and scientists.

Book readership

Electronics engineers; electrical circuits, devices, systems and manufacturing researchers and engineers; engineering and applied physics


Postgraduate and professional.

Book contents

1: Introduction; 2: Transport properties in strained layers; 3: Strained layer epitaxy: growth and characterization; 4: Ultrathin gate dielectrics on strained layers; 5: Heterojunction bipolar transistors (HBTs); 6: Heterostructure field effect transistors (HFETs); 7: Characterization of heterostructure MOSFETs; 8: Modulation doped field effect transistors (MODFETs); 9: Contact metallization on strained layers; 10: Silicon based optoelectronic devices.

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